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| AP20N03S/P Advanced Power Electronics Corp. Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 52m 20A G S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP20N03P) is available for low-profile applications. G D GD S TO-263(S) TO-220(P) S Units V V A A A W W/ Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 30 20 20 13 60 31 0.25 -55 to 150 -55 to 150 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-case Rthj-amb Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 4.0 62 Unit /W /W Data & specifications subject to change without notice 201024032 AP20N03S/P Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 30 1 - Typ. 0.037 Max. Units 52 85 3 1 100 100 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=10A VGS=4.5V, ID=8A 3 6.1 1.4 4 4.9 29 14.3 3.6 290 160 45 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VDS=VGS, ID=250uA VDS=10V, ID=10A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS= 20V ID=10A VDS=24V VGS=5V VDS=15V ID=20A RG=3.3,VGS=10V RD=0.75 VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS ISM VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.3V 1 Min. - Typ. - Max. Units 20 60 1.3 A A V Pulsed Source Current ( Body Diode ) Forward On Voltage 2 Tj=25, IS=20A, VGS=0V Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. AP20N03S/P 70 50 60 T C =25 C o V G =10V 40 T C =150 o C V G =10V ID , Drain Current (A) V G =8.0V 30 ID , Drain Current (A) 50 V G =8.0V V G =6.0V 40 V G =6.0V 20 30 20 V G =4.0V 10 V G =4.0V 10 V G =3.0V 0 0 1 2 3 4 5 6 7 8 9 V G =3.0V 0 0 1 2 3 4 5 6 7 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 85 1.8 80 I D =10A T C =25 C Normalized RDS(ON) 1.4 I D =10A 1.6 75 o V G =10V 70 RDSON (m ) 65 60 1.2 55 1 50 45 0.8 40 35 3 4 5 6 7 8 9 10 11 0.6 -50 0 50 100 150 V GS (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage 4. Normalized On-Resistance v.s. Junction Temperature 3 100 10 2 IS (A) T j = 25 o C 1 VGS(th) (V) 1 0 -50 T j = 150 o C 0.1 0.01 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 0 50 100 150 V SD (V) T j , Junction Temperature( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP20N03S/P 12 1000 f=1.0MHz I D =10A VGS , Gate to Source Voltage (V) 10 8 6 C (pF) V D =16V V D =20V V D =24V Ciss Coss 100 4 Crss 2 0 0 2 4 6 8 10 12 10 1 6 11 16 21 26 31 Q G , Total Gate Charge (nC) V DS (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 DUTY=0.5 Normalized Thermal Response (Rthjc) 100us 0.2 ID (A) 0.1 0.1 10 1ms 0.05 PDM t 0.02 10ms T c =25 o C Single Pulse 1 1 10 T 0.01 Single Pulse 100ms DC 100 0.01 0.00001 0.0001 0.001 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + TC 0.1 1 V DS (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance RD VDS D TO THE OSCILLOSCOPE D VDS TO THE OSCILLOSCOPE 0.5x RATED G 0.8x RATED VDS RG G S + 10V S VGS + VGS 1~ 3 mA IG ID Fig 11. Switching Time Circuit Fig 12. Gate Charge Circuit |
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